R.J. Von Gutfeld, D.R. Vigliotti, et al.
Applied Physics Letters
A three-terminal spin-torque-driven magnetic switch is experimentally demonstrated. The device uses nonlocal spin current and spin accumulation as the main mechanism for current-driven magnetic switching. It separates the current-induced write operation from that of a magnetic tunnel junction based read. The write current only passes through metallic structures, improving device reliability. The device structure makes efficient use of lithography capabilities, important for robust process integration. © 2009 American Institute of Physics.
R.J. Von Gutfeld, D.R. Vigliotti, et al.
Applied Physics Letters
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VLSI Technology 2003
W.J. Gallagher, D.W. Abraham, et al.
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Nature