J.Z. Sun, W.J. Gallagher, et al.
Physical Review B
A three-terminal spin-torque-driven magnetic switch is experimentally demonstrated. The device uses nonlocal spin current and spin accumulation as the main mechanism for current-driven magnetic switching. It separates the current-induced write operation from that of a magnetic tunnel junction based read. The write current only passes through metallic structures, improving device reliability. The device structure makes efficient use of lithography capabilities, important for robust process integration. © 2009 American Institute of Physics.
J.Z. Sun, W.J. Gallagher, et al.
Physical Review B
R.B. Laibowitz, J.Z. Sun, et al.
IEEE TAS
G.Q. Gong, C.L. Canedy, et al.
Journal of Applied Physics
B. Özyilmaz, A.D. Kent, et al.
Physical Review Letters