Recent advances in MRAM technology
W.J. Gallagher, D.W. Abraham, et al.
VLSI Technology 2005
A three-terminal spin-torque-driven magnetic switch is experimentally demonstrated. The device uses nonlocal spin current and spin accumulation as the main mechanism for current-driven magnetic switching. It separates the current-induced write operation from that of a magnetic tunnel junction based read. The write current only passes through metallic structures, improving device reliability. The device structure makes efficient use of lithography capabilities, important for robust process integration. © 2009 American Institute of Physics.
W.J. Gallagher, D.W. Abraham, et al.
VLSI Technology 2005
C.C. Tsuei, J.R. Kirtley, et al.
Physica C: Superconductivity and its Applications
J.S. Noh, T.K. Nath, et al.
Materials Research Society Symposium-Proceedings
R. Beach, T. Min, et al.
IEDM 2008