A compact eFUSE programmable array memory for SOI CMOS

Abstract

Demonstrating a >10X density increase over traditional VLSI fuse circuits, a compact eFUSE programmable array memory configured as a 4Kb one-time programmable ROM (OTPROM) is presented using a 6.2μm2 NiSi x silicide electromigration 1T1R cell in 65nm SOI CMOS. A 20μs programming time at 1.5 V is achieved by asymmetrical scaling of the fuse and a shared differential sensing scheme. Having zero process cost adder, eFUSE is fully compatible with standard VLSI manufacturing.