A 243-GHz F_t and 208-GHz F_max, 90-nm SOI CMOS SoC technology with low-power millimeter-wave digital and RF circuit capability

Abstract

A 90-nm SOI complementary metal oxide semiconductor (CMOS) SoC technology with low-power millimeter-wave digital and radio frequency (RF) circuit capability was discussed. SOI CMOS technology provided low parasitic junction capacitance, speed and power to the digital applications. The inductor Q of 20 and low-loss microstrip transmission lines were successfully integrated without extra masks and processing steps. The low parasitic junction capacitance of SOI expanded the use of CMOS beyond 30-GHz.