PublicationIEDM 2007Conference paper(110) Channel, SiON gate-dielectric PMOS with record high Ion=1 mA/μm through channel stress and source drain external resistance (R ext) engineeringIEDM 2007View publicationAbstractNo abstract available.Home↳ PublicationsDate01 Dec 2007PublicationIEDM 2007AuthorsB. YangA. WaiteH. YinJ. YuL. BlackD. ChidambarraoA. DomenicucciX. WangS. KuY. WangH.V. MeerB. KimH. NayfehS.D. KimK. TabakmanR. PalK. NummyB. GreeneP. FisherJ. LiuQ. LiangJ. HoltS. NarasimhaZ. LuoH. UtomoX. ChenD.-G. ParkC.Y. SungR.A. WachnikG. FreemanD. SchepisE. MaciejewskiM. KhareE. LeobandungS. LuningP. AgnelloIBM-affiliated at time of publicationTopicsPhysical SciencesShare
