Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2006
- VLSI Technology 2006
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13 results at VLSI Technology 2006
RTA-driven intra-die variations in stage delay, and parametric sensitivities for 65nm technology
- I. Ahsan
- N. Zamdmer
- et al.
- 2006
- VLSI Technology 2006
A comparative study of NBTI and PBTI (Charge Trapping) in SiO 2/HfO2 stacks with FUSI, TiN, Re gates
- S. Zafar
- Y.-H. Kim
- et al.
- 2006
- VLSI Technology 2006
Poly-Si/AlN/HfSiO stack for ideal threshold voltage and mobility in sub-100 nm MOSFETs
- K.-L. Lee
- M.M. Frank
- et al.
- 2006
- VLSI Technology 2006
A 45nm low cost low power platform by using integrated dual-stress-liner technology
- J. Yuan
- S.S. Tan
- et al.
- 2006
- VLSI Technology 2006
Silicon-on-insulator MOSFETs with hybrid crystal orientations
- M. Yang
- K.K. Chan
- et al.
- 2006
- VLSI Technology 2006
Investigation of FinFET devices for 32nm technologies and beyond
- H. Shang
- L. Chang
- et al.
- 2006
- VLSI Technology 2006
Lower resistance scaled metal contacts to silicide for advanced CMOS
- A. Topol
- C. Sheraw
- et al.
- 2006
- VLSI Technology 2006
A new route to ultra-high density memory using the Micro to Nano Addressing Block (MNAB)
- R.S. Shenoy
- K. Gopalakrishnan
- et al.
- 2006
- VLSI Technology 2006
Novel one-mask self-heating pillar phase change memory
- T.D. Happ
- M. Breitwisch
- et al.
- 2006
- VLSI Technology 2006