Publications

465 results at IEEE T-ED

High-Mobility FET in Strained Silicon
- - Robert W. Keyes
- 1986
- IEEE T-ED
On the Accuracy of Channel Length Characterization of LDD MOSFET's
- - Jack Y.-C. Sun
  - Matthew R. Wordeman
  - et al.
- 1986
- IEEE T-ED
Design and Characteristics of a Lightly Doped Drain (LDD) Device Fabricated with Self-Aligned Titanium Disilicide
- - Fang-Shi J. Lai
  - Jack Yuan-Chen Sun
  - et al.
- 1986
- IEEE T-ED
A Highly Latchup-Immune 1-μm CMOS Technology Fabricated with 1-MeV Ion Implantation and Self-Aligned TiSi₂
- - Fang-Shi J. Lai
  - L.K. Wang
  - et al.
- 1986
- IEEE T-ED
Physics, Technology, and Modeling of Polysilicon Emitter Contacts for VLSI Bipolar Transistors
- - Gary L. Patton
  - James D. Plummer
- 1986
- IEEE T-ED
PERFORMANCE OF HETEROSTRUCTURE FET'S IN LSI.
- - S. Tiwari
- 1986
- IEEE T-ED
IVB-1 Tunneling Component in Polysilicon Self-Aligned Bipolar Transistors
- - E. Hackbarth
  - G.P. Li
  - et al.
- 1986
- IEEE T-ED
Increasing the Current Driving Capability of Epitaxial Schottky-Barrier Diodes Using High-Energy Implantation
- - C.T. Chuang
  - G.P. Li
  - et al.
- 1985
- IEEE T-ED
An Analytical One-Dimensional Model for Lightly Doped Drain (LDD) MOSFET Devices
- - Fang-Shi J. Lai
  - Jack Yuan-Chen Sun
- 1985
- IEEE T-ED
IIIB-2 Channel Length Characterization of LDD MOSFET's-
- - Jack Y. C. Sun
  - Matthew R. Wordeman
  - et al.
- 1985
- IEEE T-ED