Publication
IEEE T-ED
Paper

A Fully Scaled Submicrometer NMOS Technology Using Direct-Write E-Beam Lithography

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Abstract

Fully scaled NMOS devices, circuits, and dynamic memory with 1/2-µm nominal minimum dimensions at each level have been fabricated using direct-write e-beam patterning. This high-density NMOS technology yields nominally loaded average gate delays of 650 ps/stage with a power dissipation of 38 µW. The characteristics of this technology are presented with specific emphasis placed on features of the design which are unique to submicrometer MOSFET's, including a study of nonscaling effects and their impact on the device and circuit design. Copyright © 1985 by The Institute of Electrical and Electronics Engineers, Inc.

Date

01 Jan 1985

Publication

IEEE T-ED