Publications

2347 results at Applied Physics Letters

Pyrometric measurement of temperature during cw argon-ion laser annealing and the solid-state regrowth rate of amorphous Si
- - T.O. Sedgwick
- 1981
- Applied Physics Letters
Contact reaction between Si and rare earth metals
- - R.D. Thompson
  - B.Y. Tsaur
  - et al.
- 1981
- Applied Physics Letters
Diffusion of gold in silicon: A new model
- - U. Gösele
  - F.F. Morehead
  - et al.
- 1981
- Applied Physics Letters
Kinetics and mechanism of amorphous hydrogenated silicon growth by homogeneous chemical vapor deposition
- - B.A. Scott
  - R.M. Plecenik
  - et al.
- 1981
- Applied Physics Letters
Identification of electron traps in thermal silicon dioxide films
- - A. Hartstein
  - D.R. Young
- 1981
- Applied Physics Letters
A technique for comparing the bulk and surface structure of defects in thin films using the scanning transmission electron microscope.
- - M.M.J. Treacy
  - W. Krakow
  - et al.
- 1981
- Applied Physics Letters
Volatile metal-oxide incorporation in layers of GaAs, Ga _1-xAl_xAs and related compounds grown by molecular beam epitaxy
- - P.D. Kirchner
  - J. Woodall
  - et al.
- 1981
- Applied Physics Letters
Reduction in dislocation densities in the step-graded growth of InGaAs by molecular-beam epitaxy
- - C.M. Serrano
  - Chin-An Chang
- 1981
- Applied Physics Letters
Annealing ambient: A useful probe for interface interactions in thin films
- - Chin-An Chang
- 1981
- Applied Physics Letters
Ge-GaAs superlattices by molecular beam epitaxy
- - Chin-An Chang
  - Armin Segmüller
  - et al.
- 1981
- Applied Physics Letters