Publication
Applied Physics Letters
Paper

Growth kinetics of oxidation-induced stacking faults in silicon: A new concept

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Abstract

It is reasonable to assume that the volume increase of about 120% associated with the formation of a SiO2 molecule from a Si atom during thermal oxidation of Si is facilitated by viscoelastic flow of the newly formed SiO2 layer at the SiO2-Si interface. This flow is driven by a compressive plane stress. We propose that it is this stress which gives rise to a supersaturation of Si self-interstitials in the Si crystal, and that consequently the growth kinetics of oxidation-induced stacking faults is determined by the kinetics of the viscoelastic flow of the SiO2.

Date

01 Dec 1981

Publication

Applied Physics Letters

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