Conference paper
Experimental 27 ns 1 Mb CMOS high-speed DRAM
S. Dhong, W.H. Henkels, et al.
VLSI Circuits 1989
An inverting, nonlatching switching device capable of analog as well as digital signal amplification is investigated experimentally and theoretically (numerical simulations). The device reported is based on the dynamic properties of long Josephson junctions. It is shown that current gain of the order of 5 can be achieved in a 2.5-μm technology, for small resistive loads of the order of 0.5 Ω.
S. Dhong, W.H. Henkels, et al.
VLSI Circuits 1989
T.V. Rajeevakumar, John X. Przybysz, et al.
Physical Review B
T.V. Rajeevakumar
Physica B+C
T.V. Rajeevakumar
IEEE Transactions on Magnetics