Rapid cooling of silicon (111)-melt interfaces by molecular dynamics
- Jeremy Q. Broughton
- Farid F. Abraham
- 1986
- Journal of Crystal Growth
Publications
Date
Featured collections
Popular topics
166 results at Journal of Crystal Growth
The effect of surface preparation on the production of low interfacial charge regrown interfaces
- T.F. Kuech
- E.D. Marshall
- et al.
- 1986
- Journal of Crystal Growth
Kinetic segregation of AlAs-GaAs during 〈110〉 MBE
- J.A. Van Vechten
- 1985
- Journal of Crystal Growth
Silicon doping of GaAs and AlxGa1-xAs using disilane in metalorganic chemical vapor deposition
- T.F. Kuech
- E. Veuhoff
- et al.
- 1984
- Journal of Crystal Growth
Mechanism of carbon incorporation in MOCVD GaAs
- T.F. Kuech
- E. Veuhoff
- 1984
- Journal of Crystal Growth
Computer simulation of Czochralski melt convection in a magnetic field
- W.E. Langlois
- 1984
- Journal of Crystal Growth
A 1 kW mirror furnace for growth of refractory oxide single crystals by a floating-zone technique
- J.G. Bednorz
- H. Arend
- 1984
- Journal of Crystal Growth
Scanning tunneling microscopy on crystal surfaces
- G. Binnig
- H. Rohrer
- 1983
- Journal of Crystal Growth
Czochralski bulk flow of silicon at large melt aspect ratio
- W.E. Langlois
- 1983
- Journal of Crystal Growth
Czochralski crystal growth in an axial magnetic field: effects of Joule heating
- W.E. Langlois
- Ki-Jun Lee
- 1983
- Journal of Crystal Growth