Rapid cooling of silicon (111)-melt interfaces by molecular dynamics

Abstract

Equilibrium and rapidly quenched Si(111)-melt interfaces have been simulated by molecular dynamics using the Stillinger-Weber potential for silicon. The rapidly quenched interface locks into a meta-stable state with zero growth rate. Both the equilibrium and quenched states have very sharp interfaces, the interfacial region being confined to approximately one layer. The implications of this behavior and its comparison with simpler spherically symmetric systems are discussed. © 1986.