About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Kinetics of nucleation and growth of Si on SiO2 in very low pressure SiH4 chemical vapor deposition
- S.S. Dana
- M. Liehr
- et al.
- 1992
- Applied Physics Letters