Exact description and data fitting of ion-implanted dopant profile evolution during annealing
- R. Ghez
- G.S. Oehrlein
- et al.
- 1984
- Applied Physics Letters
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42 results for R. Ghez
Reversal in the growth or dissolution of III-V heterostructures by liquid phase epitaxy
- M.B. Small
- R. Ghez
- 1984
- Journal of Applied Physics
Growth and dissolution kinetics of ternary III-V heterostructures formed by liquid phase epitaxy. III. Effects of temperature programming
- R. Ghez
- M.B. Small
- 1982
- Journal of Applied Physics
Anomalous diffusion behavior of Mg in GaAs
- M.B. Small
- R.M. Potemski
- et al.
- 1982
- Applied Physics Letters
Gadolinium gallium garnet liquid phase epitaxy and the physical chemistry of garnet molten solutions
- E.A. Giess
- M.M. Faktor
- et al.
- 1982
- Journal of Crystal Growth
Al diffusivity as a function of growth rate during the formation of (GaAl)As heterojunctions by liquid phase epitaxy
- M.B. Small
- R. Ghez
- et al.
- 1981
- Journal of Applied Physics
Growth and dissolution of ternary alloys of III-V compounds by liquid phase epitaxy and the formation of heterostructures
- R. Ghez
- M.B. Small
- 1981
- Journal of Crystal Growth
Expansions in time for the solution of one-dimensional stefan problems of crystal growth
- R. Ghez
- 1980
- Int. J. Heat Mass Transf.
TA-A1 Theory of Nonthermal Pulsed Laser Annealing
- J.A. Van Vechten
- Ellen J. Yoffa
- et al.
- 1979
- IEEE T-ED
Correlation of the interface reaction constant with elementary surface processes
- R. Ghez
- 1978
- Journal of Crystal Growth