PaperFormation of interstitial-type dislocation loops in tetrahedral semiconductors by precipitation of vacanciesJ.A. Van VechtenPhysical Review B
PaperEffect of reconstruction of a semiconductor surface on the crystal growthJ.A. Van VechtenApplied Physics Letters
PaperInterface kinetics and crystal growth under conditions of constant cooling rate. I. Constant diffusion coefficientR. Ghez, J.S. LewJournal of Crystal Growth
