PaperReasons to believe pulsed laser annealing of Si does not involve simple thermal meltingJ.A. Van Vechten, R. Tsu, et al.Physics Letters A
PaperThe formation of Ga1-xAlxAs layers on the surface of GaAs during continual dissolution into Ga-Al-As solutionsM.B. Small, R. Ghez, et al.Applied Physics Letters
PaperCarrier diffusion in semiconductors subject to large gradients of excited carrier densityM. Wautelet, J.A. Van VechtenPhysical Review B
