Aggressive SiGe channel gate stack scaling by remote Oxygen scavenging: Gate-first pFET performance and reliability
- Martin M. Frank
- Eduard A. Cartier
- et al.
- 2012
- ECS Solid State Letters
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88 results for Takashi Ando
Physical characterization of sub-32-nm semiconductor materials and processes using advanced ion beam-based analytical techniques
- M. Hopstaken
- D. Pfeiffer
- et al.
- 2012
- Surface and Interface Analysis
Mechanism of VFB / VTH shift in Dysprosium incorporated HfO2 gate dielectric n-Type Metal-Oxide-Semiconductor devices
- Tackhwi Lee
- Kisik Choi
- et al.
- 2011
- Journal of Vacuum Science and Technology B
Ruthenium based metals using atomic vapor deposition for gate electrode applications
- Changhwan Choi
- Takashi Ando
- et al.
- 2011
- Applied Physics Letters
Physical origins of mobility degradation in extremely scaled SiO 2 / HfO2 gate stacks with la and Al induced dipoles
- Takashi Ando
- Matt Copel
- et al.
- 2010
- Applied Physics Letters
Temperature-dependent La- and Al-induced dipole behavior monitored by femtosecond pump/probe photoelectron spectroscopy
- Hiroaki Arimura
- Richard Haight
- et al.
- 2010
- Applied Physics Letters
Band-edge high-performance metal-gate/high-κ nMOSFET using Hf-Si/HfO 2 stack
- Takashi Ando
- Tomoyuki Hirano
- et al.
- 2009
- IEEE Transactions on Electron Devices
Quasi-damascene metal gate/high-k CMOS using oxygenation through gate electrodes
- Changhwan Choi
- Takashi Ando
- et al.
- 2009
- Microelectronic Engineering