ReSta: Recovery of Accuracy During Training of Deep Learning Models in a 14-nm Technology-Based ReRAM Array
- Fabia Farlin Athena
- Nanbo Gong
- et al.
- 2023
- IEEE T-ED
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88 results for Takashi Ando
Reversing A Decades-Long Scaling Law of Dielectric Breakdown using Hydrogen-Plasma-Treated HfO2 ReRAM Devices
- Ernest Y. Wu
- Takashi Ando
- et al.
- 2023
- Advanced Electronic Materials
Mapping and statistical analysis of filaments locations in amorphous HfO2 ReRAM cells
- Franco Stellari
- Ernest Y. Wu
- et al.
- 2023
- Microelectronics Reliability
Neural network learning using non-ideal resistive memory devices
- Youngseok Kim
- Tayfun Gokmen
- et al.
- 2022
- Frontiers in Nanotechnology
Gibbs spatial process for characterization of filament interaction in ReRAM devices via photon emission microscopy
- Ernest Wu
- Franco Stellari
- et al.
- 2022
- Applied Physics Letters
Overview and outlook of emerging non-volatile memories
- Mengwei Si
- Huai-Yu Cheng
- et al.
- 2021
- MRS Bulletin
Fundamental roles of extreme-value distributions in dielectric breakdown and memory applications (minimum-value versus maximum-value statistics)
- Ernest Wu
- Takashi Ando
- et al.
- 2020
- Japanese Journal of Applied Physics
A maximum extreme-value distribution model for switching conductance of oxide-RRAM in memory applications
- Ernest Wu
- Takashi Ando
- et al.
- 2020
- Applied Physics Letters
Evolution of interfacial Fermi level in In0.53Ga0.47As/high-κ/TiN gate stacks
- Adra Carr
- John Rozen
- et al.
- 2015
- Applied Physics Letters
A simulation study of oxygen vacancy-induced variability in HfO 2/metal gated SOI FinFET
- Amit Ranjan Trivedi
- Takashi Ando
- et al.
- 2014
- IEEE T-ED