Extendibility of NiPt silicide to the 22-nm node CMOS technology
Kazuya Ohuchi, Christian Lavoie, et al.
IWJT 2008
The impacts of ruthenium-based metal gate electrodes (Ru, RuOx, RuSiOx) with atomic vapor deposition (AVD) on flatband voltage (VFB) and equivalent oxide thickness (EOT) are demonstrated using a low temperature (<400 °C) process. Increasing thickness of Ru and RuOx exhibits higher VFB, attributed to filling oxygen vacancies [Vo] in high- k gate dielectric with oxygen supplied from AVD metal gate electrodes upon annealing. Ru is efficient to attain a higher work-function and thinner EOT compared to RuOx and RuSiOx. Subsequent physical-vapor-deposition (PVD) TiN capping on AVD metals blocks oxygen out-diffusion, leading to higher VFB than PVD W or AVD TiN capping. © 2011 American Institute of Physics.
Kazuya Ohuchi, Christian Lavoie, et al.
IWJT 2008
Minhaz Abedin, Nanbo Gong, et al.
Scientific Reports
Adra Carr, John Rozen, et al.
Applied Physics Letters
A. Greene, Huimei Zhou, et al.
VLSI Technology 2019