PBTI under dynamic stress: From a single defect point of view
- K. Zhao
- J.H. Stathis
- et al.
- 2011
- IRPS 2011
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40 results for A. Kerber
PBTI relaxation dynamics after ac VS. DC stress in high-K/metal gate stacks
- K. Zhao
- J.H. Stathis
- et al.
- 2010
- IRPS 2010
Impact of charge trapping on the voltage acceleration of TDDB in metal gate/high-k n-channel MOSFETs
- A. Kerber
- A. Vayshenker
- et al.
- 2010
- IRPS 2010
Impact of instrumental current scatter on fast Bias Temperature Instability testing
- A. Kerber
- K. Zhao
- et al.
- 2009
- IIRW 2009
Extremely scaled gate-first high-k/metal gate stack with EOT of 0.55 nm using novel interfacial layer scavenging techniques for 22nm technology node and beyond
- K. Choi
- H. Jagannathan
- et al.
- 2009
- VLSI Technology 2009
TDDB failure distribution of metal gate / high-k CMOS devices on SOI substrates
- A. Kerber
- E. Cartier
- et al.
- 2009
- IRPS 2009
Accurate model for time-dependent dielectric breakdown of high-k metal gate stacks
- T. Nigam
- A. Kerber
- et al.
- 2009
- IRPS 2009
Stress-induced leakage current and defect generation in nFETs with HfO 2/TiN gate stacks during positive-bias temperature stress
- Eduard Cartier
- Andreas Kerber
- 2009
- IRPS 2009
The effect of interface thickness of high-k/metal gate stacks on NFET dielectric reliability
- Barry P. Linder
- Eduard Cartier
- et al.
- 2009
- IRPS 2009
Copper contact metallization using Ru-based barrier liners for 45 nm and 32 nm nodes: Reliability and device performance
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008