The effect of interface thickness of high-k/metal gate stacks on NFET dielectric reliability

Abstract

This paper explores the trade-offs of interface layer (IL) thickness, interface growth process, and interface nitrogen content on NFET dielectric reliability using ramp breakdown tests. The median breakdown voltage and the Weibull slope correlate strongly with the gate leakage irrespective of the IL process. Both reliability parameters are predominately modulated by the IL thickness. ©2009 IEEE.