Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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19 results for Hong He

High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET
- - K. Cheng
  - A. Khakifirooz
  - et al.
- 2012
- IEDM 2012
Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications
- - K. Cheng
  - A. Khakifirooz
  - et al.
- 2009
- IEDM 2009
Hole transport in strained and relaxed sige channel extremely thin SOI MOSFETs
- - Ali Khakifirooz
  - Kangguo Cheng
  - et al.
- 2013
- IEEE Electron Device Letters
Scalability of extremely thin SOI (ETSOI) MOSFETs to sub-20-nm gate length
- - Ali Khakifirooz
  - Kangguo Cheng
  - et al.
- 2012
- IEEE Electron Device Letters
Bottom oxidation through STI (BOTS) - A novel approach to fabricate dielectric isolated FinFETs on bulk substrates
- - K. Cheng
  - S.-C. Seo
  - et al.
- 2014
- VLSI Technology 2014
Towards electrical testable soi devices using directed self-assembly for fin formation
- - Chi Chun Liu
  - Cristina Estrada-Raygoza
  - et al.
- 2014
- SPIE Advanced Lithography 2014
Elastic relaxation in intrinsically-strained Fins: Simulations, physical and electrical characterization
- - F. Allibert
  - Pierre Morin
  - et al.
- 2014
- S3S 2014
Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs
- - A. Khakifirooz
  - R. Sreenivasan
  - et al.
- 2013
- S3S 2013
Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS
- - A. Khakifirooz
  - Kangguo Cheng
  - et al.
- 2012
- VLSI Technology 2012
Gas source depletion study of high-order silanes of silicon-based epitaxial layers grown with RPCVD and low temperatures
- - Keith Chung
  - Paul Brabant
  - et al.
- 2012
- ECS Meeting 2012