J. Cai, K. Rim, et al.
IEDM 2004
Relatively good GaAs solar cells can be made from poor-quality substrates by making the junction deep (≳1 μ) instead of shallow and by "leaching" both the pGaAs and nGaAs regions during the growth process. AM0 efficiencies of 14.7% (19% AM1) have been obtained from substrates with starting substrate diffusion lengths of 0.6 μ.
J. Cai, K. Rim, et al.
IEDM 2004
H.J. Hoffmann, J. Woodall
Applied Physics A Solids and Surfaces
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VLSI Technology 1993
R.M. Feenstra, E.T. Yu, et al.
Applied Physics Letters