BEOL process integration with Cu/SiCOH (k=2.8) low-k interconnects at 65nm groundrules
- S. Lane
- M. Fukasawa
- et al.
- 2005
- AMC 2005
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28 results for Dale McHerron
BEOL process integration with Cu/SiCOH (k=2.8) low-k interconnects at 65 nm groundrules
- M. Fukasawa
- S. Lane
- et al.
- 2005
- IITC 2005
High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell
- E. Leobandung
- H. Nayakama
- et al.
- 2005
- VLSI Technology 2005
Low-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes
- T. Nogami
- S. Lane
- et al.
- 2005
- Optics East 2005
Lower-k SiCOH integration for 65 nm ground rules
- T. Nogami
- S. Lane
- et al.
- 2005
- VMIC 2005
Large format fabrication a practical approach to low cost MCM-d
- George E. White
- Eric Perfecto
- et al.
- 1994
- MCMC 1994
Dielectric anisotropy of BPDA-PDA polyimide and its effect on electrical characteristics of interconnects
- A. Deutsch
- M. Swaminathan
- et al.
- 1993
- IEEE Topical Meeting EPEPS 1993
3-D Die Stacking with 55 μm Pitch Interconnections on Advanced Ground-Rule Laminate for Artificial Intelligence System
- Katsuyuki Sakuma
- Mukta Farooq
- et al.
- 2021
- IEEE Transactions on CPMT