Cyclic Cl2/H2 quasi-atomic layer etching approach for TiN and TaN patterning using organic masks
- Nathan Marchack
- J. M. Papalia
- et al.
- 2017
- JVSTA
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108 results for Sebastian Engelmann
Highly selective dry etching of polystyrene-poly(methyl methacrylate) block copolymer by gas pulsing carbon monoxide-based plasmas
- Hiroyuki Miyazoe
- Ashish Jagtiani
- et al.
- 2017
- Journal of Physics D: Applied Physics
Electron beam generated plasmas: Characteristics and etching of silicon nitride
- S. G. Walton
- D. R. Boris
- et al.
- 2017
- Microelectronic Engineering
Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
- Ashish Jagtiani
- Hiroyuki Miyazoe
- et al.
- 2016
- JVSTA
Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma
- Dominik Metzler
- Chen Li
- et al.
- 2016
- JVSTA
Application of cyclic fluorocarbon/argon discharges to device patterning
- Dominik Metzler
- Kishore Uppireddi
- et al.
- 2016
- JVSTA
Challenges of tailoring surface chemistry and plasma/surface interactions to advance atomic layer etching
- Sebastian U. Engelmann
- Robert L. Bruce
- et al.
- 2015
- ECS J. Solid State Sci. Technol.
Contamination mitigation of hydrogen silsesquioxane resist processed with Na+-containing developer for nanoscale CMOS device patterning
- Markus Brink
- Isaac Lauer
- et al.
- 2014
- Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Fluorocarbon assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma
- Dominik Metzler
- Robert L. Bruce
- et al.
- 2013
- JVSTA
Investigation of plasma etch damage to porous oxycarbosilane ultra low-k dielectric
- Robert Bruce
- Sebastian Engelmann
- et al.
- 2013
- Journal of Physics D: Applied Physics