Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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6 results for Ashish Baraskar

First demonstration of high-Ge-content strained-Si_1-xGe_x (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications
- - Pouya Hashemi
  - Karthik Balakrishnan
  - et al.
- 2014
- IEDM 2014
Ultra low contact resistivities for CMOS beyond 10-nm node
- - Zhen Zhang
  - Siyuranga Obasa Koswatta
  - et al.
- 2013
- IEEE Electron Device Letters
Strained Si_1-xGe_x-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond
- - Pouya Hashemi
  - Karthik Balakrishnan
  - et al.
- 2014
- VLSI Technology 2014
High-performance Si_1-xGe_x channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
- - P. Hashemi
  - M. Kobayashi
  - et al.
- 2013
- VLSI Circuits 2013
High-performance Si_1-xGe_x channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
- - P. Hashemi
  - M. Kobayashi
  - et al.
- 2013
- VLSI Technology 2013
InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology
- - Uttam Singisetti
  - Mark A. Wistey
  - et al.
- 2009
- Physica Status Solidi (C) Current Topics in Solid State Physics