F. Chen, Carole Graas, et al.
Microelectronics Reliability
With the continuing aggressive scaling of interconnect dimensions and introduction of lower k materials, back-end-of-line (BEOL) dielectric time-dependent dielectric breakdown (TDDB) reliability margin is greatly reduced. In this paper, a comprehensive investigation on abnormal low-k TDDB characteristics, a systematic degradation of Weibull slopes, and a systematic increase of field acceleration at lower stress voltages due to massive Cu diffusion were conducted for Cu interconnect with low-k dielectric. Based on data from extensive electrical and physical analysis, such abnormal TDDB characteristics were attributed to slow metallic diffusion in bulk low-k under bias and temperature stress. A TDDB model based on invasion percolation was proposed to model the observed abnormalities. Cu interconnects with robust liner and capping layer, to ensure metal free low-k film, have become important for BEOL low-k TDDB. © 2012 American Institute of Physics.
F. Chen, Carole Graas, et al.
Microelectronics Reliability
F. Chen, Michael Shinosky, et al.
IRPS 2011
F. Chen, Carole Graas, et al.
IRPS 2015
Fen Chen, Jeffrey Gambino, et al.
IRPS 2012