Extendibility of NiPt silicide contacts for CMOS technology demonstrated to the 22-nm node
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2007
- IEDM 2007
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196 results for Christian Lavoie
Aggressively scaled (0.143 μm 2) 6T-SRAM cell for the 32 nm node and beyond
- D. Fried
- J. Hergenrother
- et al.
- 2004
- IEDM 2004
Performance enhancement on sub-70 nm strained silicon SOI MOSFETS on ultra-thin thermally mixed strained silicon/SiGe on insulator(TM-SGOI) substrate with raised S/D
- B.H. Lee
- A.C. Mocuta
- et al.
- 2002
- IEDM 2002
Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation
- Jakub Kedzierski
- Edward Nowak
- et al.
- 2002
- IEDM 2002
The future of silicide for CMOS contacts
- R.A. Roy
- C. Cabral Jr.
- et al.
- 1999
- MRS Spring Meeting 1999
Classification of the modes of dissociation in immiscible Cu-alloy thin films
- K. Barmak
- G.A. Lucadamo
- et al.
- 1999
- MRS Spring Meeting 1999
Is selective CVD an improvement for the titanium silicide process in sub-quarter micron technology? A phase formation study using x-ray diffraction
- R.A. Roy
- Cryil Cabral Jr.
- et al.
- 1998
- MRS Spring Meeting 1998
Is selective CVD an improvement for the titanium silicide process in sub-quarter micron technology? A phase formation study using x-ray diffraction
- R.A. Roy
- Cryil Cabral Jr.
- et al.
- 1998
- MRS Spring Meeting 1998
Surface roughening during titanium silicide formation: A comparison between Si(100) and poly-Si substrates
- C. Lavoie
- R. Martel
- et al.
- 1996
- MRS Fall Meeting 1996
In situ TEM analysis of TiSi2 C49-C54 transformations during annealing
- L. Gignac
- V. Svilan
- et al.
- 1996
- MRS Fall Meeting 1996