Publications

60 results for Hemanth Jagannathan

Novel Materials and Processes in Replacement Metal Gate for Advanced CMOS Technology
- - Ruqiang Bao
  - Steven Hung
  - et al.
- 2018
- IEDM 2018
Toward High Performance SiGe Channel CMOS: Design of High Electron Mobility in SiGe nFinFETs Outperforming Si
- - Choonghyun Lee
  - Richard G. Southwick
  - et al.
- 2018
- IEDM 2018
Advanced Arsenic Doped Epitaxial Growth for Source Drain Extension Formation in Scaled FinFET Devices
- - Shogo Mochizuki
  - B. Colombeau
  - et al.
- 2018
- IEDM 2018
Differentiated performance and reliability enabled by multi-work function solution in RMG Silicon and SiGe MOSFETs
- - Ruqiang Bao
  - Richard G. Southwick
  - et al.
- 2018
- VLSI Technology 2018
Simulation of 3D Doping by Plasma Immersion Ion Implantation for FinFET or deep Trench Doping Applications. Effect of main Process Parameters and Study of Wall Doping Non-Uniformity as Function of Form Factor and Device Scaling
- - Frank Torregrosa
  - Benjamin Roux
  - et al.
- 2018
- IIT 2018
Laser annealing in CMOS manufacturing
- - Oleg Gluschenkov
  - H. Jagannathan
- 2018
- ECS Meeting 2018
A comparative study of strain and Ge content in Si_1-xGe_x channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs
- - Choonghyun Lee
  - Shogo Mochizuki
  - et al.
- 2017
- IEDM 2017
Quantification of local strain distributions in nanoscale strained SiGe FinFET structures
- - Shogo Mochizuki
  - Conal E. Murray
  - et al.
- 2017
- Journal of Applied Physics
Dual beam laser annealing for contact resistance reduction and its impact on VLSI integrated circuit variability
- - Zuoguang Liu
  - Oleg Gluschenkov
  - et al.
- 2017
- VLSI Technology 2017
Understanding the interfacial layer formation on strained Si_1-xGe_x channels and their correlation to inversion layer hole mobility
- - Choonghyun Lee
  - Richard G. Southwick
  - et al.
- 2017
- VLSI Technology 2017