High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length
- Xiao Sun
- Christopher P. D’Emic
- et al.
- 2017
- VLSI Technology 2017
Publications
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34 results for Cheng-Wei Cheng
Materials challenges for III-V/Si co-integrated CMOS
- Devendra Sadana
- Cheng-Wei Cheng
- et al.
- 2015
- CICC 2015
Vertical thinking in blue light emitting diodes: GaN-on-graphene technology
- Can Bayram
- Jeehwan Kim
- et al.
- 2015
- SPIE OPTO 2015
Polarization-free GaN emitters in the ultraviolet and visible spectra via heterointegration on CMOS-compatible Si (100)
- Can Bayram
- John A. Ott
- et al.
- 2015
- SPIE OPTO 2015
Engineering future light emitting diodes and photovoltaics with inexpensive materials: Integrating ZnO and Si into GaN-based devices
- Can Bayram
- K.-T. Shiu
- et al.
- 2013
- SPIE OPTO 2013
Effect of Al2O3/InGaAs interface on channel mobility
- L. Yang
- C.-W. Cheng
- et al.
- 2011
- ECS Meeting 2011
Low RESET Current Mushroom-Cell Phase-Change Memory Using Fiber-Textured Homostructure GeSbTe on Highly Oriented Seed Layer
- Guy M. Cohen
- Amlan Majumdar
- et al.
- 2024
- physica status solidi RRL
Projected Mushroom Type Phase-Change Memory
- Syed Ghazi Sarwat
- Timothy M. Philip
- et al.
- 2021
- Advanced Functional Materials
A four-FET method for extracting mobility in FETs without field oxide
- Amlan Majumdar
- Ko-Tao Lee
- et al.
- 2014
- IEEE T-ED
CMOS-Compatible self-aligned In0.53Ga0.47As MOSFETs with gate lengths down to 30 nm
- Amlan Majumdar
- Yanning Sun
- et al.
- 2014
- IEEE T-ED