Imaging, Modeling and Engineering of Strain in Gate-All-Around Nanosheet Transitors
- S. Reboh
- V. Boureau
- et al.
- 2019
- IEDM 2019
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4 results for O. Faynot
High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond
- Q. Liu
- M. Vinet
- et al.
- 2013
- IEDM 2013
Impact of source/drain silicon cap on FDSOI SiGe pMOSFET performance
- E. Augendre
- S. Maitrejean
- et al.
- 2015
- S3S 2015
Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology
- S. Reboh
- R. Coquand
- et al.
- 2018
- Applied Physics Letters