Interface states induced by the presence of trapped holes near the silicon-silicon-dioxide interface
- D.J. DiMaria
- D.A. Buchanan
- et al.
- 1995
- Journal of Applied Physics
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51 results for D.A. Buchanan
Atomic hydrogen-induced degradation of thin SiO2 gate oxides
- E. Cartier
- D.A. Buchanan
- et al.
- 1995
- Journal of Non-Crystalline Solids
Anomalous positive charge formation by atomic hydrogen exposure
- R.E. Stahlbush
- E. Cartier
- et al.
- 1995
- Microelectronic Engineering
CMOS scaling into the 21st century: 0.1 μm and beyond
- Y. Taur
- Y. Mii
- et al.
- 1995
- IBM J. Res. Dev
Defects generated by Fowler-Nordheim injection in silicon dioxide films produced by plasma-enhanced chemical-vapour deposition with nitrous oxide and silane
- D. Landheer
- Y. Tao
- et al.
- 1995
- Journal of Applied Physics
Thermal stability and electrical properties of hydrogenated amorphous carbon film
- A.C. Callegari
- D.A. Buchanan
- et al.
- 1994
- Applied Physics Letters
Hot-electron-induced hydrogen redistribution and defect generation in metal-oxide-semiconductor capacitors
- D.A. Buchanan
- A.D. Marwick
- et al.
- 1994
- Journal of Applied Physics
Defect generation in 3.5 nm silicon dioxide films
- D.A. Buchanan
- D.J. DiMaria
- et al.
- 1994
- Applied Physics Letters
Atomic hydrogen-induced interface degradation of reoxidized-nitrided silicon dioxide on silicon
- E. Cartier
- D.A. Buchanan
- et al.
- 1994
- Applied Physics Letters
On the generation of interface states from electron-hole recombination in metal-oxide-semiconductor capacitors
- D.A. Buchanan
- 1994
- Applied Physics Letters