D.A. Buchanan, M.V. Fischetti, et al.
Physical Review B
In this study, we have measured the interface state generation rate resulting from the recombination of free electrons and trapped holes, which occurs either away from or near the silicon/silicon dioxide interface. For recombination events that occur away from the silicon/silicon dioxide interface (by using hole trapping on bulk-oxide ion-implanted arsenic sites), we find an interface state generation rate of approximately 0.024 states per recombination event. For recombination near the silicon/silicon dioxide, the generation rate increases by more than an order of magnitude to approximately 0.27 states per event. Therefore, interface states are more readily produced from electron/hole recombination events that occur near the Si/SiO2 interface.