Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
The effect of reactive ion etching and plasma etching on the electrical properties of boron-doped silicon has been studied, employing junction capacitance measurements on Schottky diodes. Deep-level transient spectroscopy measurements on the treated samples reveal the presence of a number of previously unreported near-surface traps. The depth profiles of the observed traps have been determined, and their annealing behaviour is studied up to 200°C. A tentative association of these traps with strain-induced defects resulting from deuterium platelet formation or with vacancy-related defect complexes is proposed. © 1989.
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989