Ming L. Yu
Physical Review B
The effect of reactive ion etching and plasma etching on the electrical properties of boron-doped silicon has been studied, employing junction capacitance measurements on Schottky diodes. Deep-level transient spectroscopy measurements on the treated samples reveal the presence of a number of previously unreported near-surface traps. The depth profiles of the observed traps have been determined, and their annealing behaviour is studied up to 200°C. A tentative association of these traps with strain-induced defects resulting from deuterium platelet formation or with vacancy-related defect complexes is proposed. © 1989.
Ming L. Yu
Physical Review B
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
R. Ghez, J.S. Lew
Journal of Crystal Growth
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals