Short-gate-length epitaxial-channel self-aligned GaAs MESFETs with very large k-factor
- T.N. Jackson
- G. Pepper
- et al.
- 1990
- IEDM 1990
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88 results for T.F. Kuech
Low resistance ohmic contacts to two-dimensional electron-gas structures by selective MOVPE
- P. Solomon
- A. Palevski
- et al.
- 1989
- IEDM 1989
Selectively Regrown Contacts to Field-Effect Transistors with Two-Dimensional Electron-Gas Channels
- A. Palevski
- Paul M. Solomon
- et al.
- 1990
- IEEE Electron Device Letters
Future beam-controlled processing technologies for microelectronics
- Dieter P. Kern
- Thomas F. Kuech
- et al.
- 1988
- Science
Long-range order in AlxGa1-xAs
- T.S. Kuan
- T.F. Kuech
- et al.
- 1985
- Physical Review Letters
Dynamics and transport of excitons confined at high-quality GaAs/AlxGa1-xAs interfaces
- G.D. Gilliland
- D.J. Wolford
- et al.
- 1991
- Gallium Arsenide and Related Compounds 1991
Interface-free GaAs structures. From bulk to the quantum limit
- D.J. Wolford
- G.D. Gilliland
- et al.
- 1991
- Gallium Arsenide and Related Compounds 1991
Optically determined low-temperature, high-mobility transport in 'interface-free' GaAs heterostructures
- D.J. Wolford
- G.D. Gilliland
- et al.
- 1991
- Gallium Arsenide and Related Compounds 1991
LOW TEMPERATURE GROWTH OF Al//xGa//1// minus //xAs BY MOCVD.
- T.F. Kuech
- E. Veuhoff
- et al.
- 1984
- Gallium Arsenide and Related Compounds 1984
A Study of silicon incorporation in GaAs MOCVD Layers
- E. Veuhoff
- T.F. Kuech
- et al.
- 2019
- JES