1 µm MOSFET VLSI Technology: Part V—A Single-Level Polysilicon Technology Using Electron-Beam Lithography
- William R. Hunter
- Linda Ephrath
- et al.
- 1979
- IEEE JSSC
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10 results for L.M. Ephrath
Selective Etching of Silicon Dioxide Using Reactive Ion Etching with CF4-H2
- L.M. Ephrath
- 2019
- JES
One-Micron Polycide (WSI2 on Poly-Si) MOSFET Technology
- M.Y. Tsai
- H.H. Chao
- et al.
- 2019
- JES
Dry Etching for VLSI—A Review
- L.M. Ephrath
- 2019
- JES
RIE Contamination of Etched Silicon Surfaces
- L.M. Ephrath
- R.S. Bennett
- 2019
- JES
A Three-Layer Resist System for Deep U.V. and RIEMicrolithography on Nonplanar Surfaces
- E. Bassous
- G. Pepper
- et al.
- 2019
- JES
Radiation damage in silicon dioxide films exposed to reactive ion etching
- D.J. DiMaria
- L.M. Ephrath
- et al.
- 2008
- Journal of Applied Physics
Reactive lon Etching for VLSI
- Linda M. Ephrath
- 1981
- IEEE T-ED
1 μm MOSFET VLSI Technology: Part V—A Single-Level Polysilicon Technology Using Electron-Beam Lithography
- William R. Hunter
- Linda Ephrath
- et al.
- 1979
- IEEE T-ED
The effect of cathode materials on reactive ion etching of silicon and silicon dioxide in a CF4 plasma
- L.M. Ephrath
- 1978
- Journal of Electronic Materials