Wideband mmWave CML static divider in 65nm SOI CMOS technology

Abstract

A wideband millimeter-wave (mmWave) CML static divider fabricated in 65nm SOI CMOS technology is presented. The mmWave system realization trend and engagement in sub-100nm CMOS technologies are summarized. CML static divider's circuit analysis, sensitivity curve, and simulations are explored. The input-locking hysteresis and divider DC bias tuning are employed to extend the divider operation range. The divider performance measurements are presented with hysteresis-assisted gain and figure-of-merits. A scalable statistical estimation is proposed, and it is validated with a full 300mm wafer measurements. The divider exhibits wideband mmWave performance to overcome the process variability in sub-100nm CMOS processes. © 2008 IEEE.