Ultrafast graphene photodetector
Fengnian Xia, Thomas Mueller, et al.
CLEO 2010
A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.
Fengnian Xia, Thomas Mueller, et al.
CLEO 2010
Scott K. Reynolds, Arun S. Natarajan, et al.
RFIC 2010
Richard S. Gaster, Liang Xu, et al.
Nature Nanotechnology
Yu-Ming Lin, Keith A. Jenkins, et al.
IMS 2011