Shu-Jen Han, Satoshi Oida, et al.
DRC 2013
A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.
Shu-Jen Han, Satoshi Oida, et al.
DRC 2013
Yu-Ming Lin
VLSI-TSA 2008
Joerg Appenzeller, Yu-Ming Lin, et al.
IEEE TNANO
Wooram Lee, Alberto Valdes-Garcia
IEEE T-MTT