A 28GHz SiGe BiCMOS phase invariant VGA
Bodhisatwa Sadhu, John F. Bulzacchelli, et al.
RFIC 2016
A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.
Bodhisatwa Sadhu, John F. Bulzacchelli, et al.
RFIC 2016
Damon B. Farmer, Yu-Ming Lin, et al.
Applied Physics Letters
Xiaoxiong Gu, Dong Gun Kam, et al.
ECTC 2013
Alberto Valdes-Garcia, Petar Pepeljugoski, et al.
IEDM 2020