Jim Adkisson, Marwan H. Khater, et al.
ECS Meeting 2012
A high performance (HP) SiGe HBT in IBM's 130nm SiGe BiCMOS8XP technology demonstrating peak fT/fMAX of 250/330GHz is reported for mm-wave and high performance RF/analog applications. The HBT has been developed as an optional device within the existing IBM 130nm SiGe BiCMOS8HP technology which includes a full suite of 130nm RFCMOS FETs, passives and mm-wave distributive passive devices. CML ring oscillators fabricated using HP HBTs in 8XP demonstrate 16% lower delay per stage than 8HP. A VCO design in 8XP has 40% lower phase noise at 36GHz compared to an identical design in 8HP. LNA and PA designs in 8XP show 6dB and 3dB higher gain respectively at 94GHz.
Jim Adkisson, Marwan H. Khater, et al.
ECS Meeting 2012
James B. Hannon, Hongsik Park, et al.
BCTM 2014
Renata Camillo-Castillo, Q. Liu, et al.
BCTM 2013
Renata Camillo-Castillo, Q. Liu, et al.
ECSSMEQ 2014