Conference paperBias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous silicon thin-film transistors
PaperPhotocreation and photobleaching of a-Si N1.6:H/c-Si interface states studied by photocapacitance transient spectroscopy
PaperElectrically neutral nitrogen dangling-bond defects in amorphous hydrogenated silicon nitride thin films
