PaperPhotocreation and photobleaching of a-Si N1.6:H/c-Si interface states studied by photocapacitance transient spectroscopyC. Godet, Jerzy KanickiPhysica B: Physics of Condensed Matter
PaperElectron paramagnetic resonance investigation of charge trapping centers in amorphous silicon nitride filmsW.L. Warren, Jerzy Kanicki, et al.Journal of Applied Physics
PaperDirect observation of the silicon nitride on amorphous silicon interface statesA. Gelatos, Jerzy KanickiApplied Physics Letters
Conference paperSimple polysilicon thin film transistor structure for achieving high on/off current ratio independent of gate biasJerzy Kanicki, M.K. HatalisSSDM 1992
