Publication
Journal of Non-Crystalline Solids
Paper

Determination of electron and hole mobilities in an a-Si:H from photo-electric effects in a waveguide structure

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Abstract

We report on novel technique for determining transport parameters in a-Si:H using a waveguide structure. The technique is based on measuring the screening of an applied voltage by photocarriers within the guide. The results, which are analyzed by rate equations which balance recombination, drift and diffusion currents, yield electron and hole mobilities of 0.6 and 0.2 cm2/(V sec) respectively. The hole mobility is close to its microscopic value. © 1991 Elsevier Science Publishers B.V. All rights reserved.

Date

01 Jan 1991

Publication

Journal of Non-Crystalline Solids

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