Scaling beyond conventional CMOS device
Meikei Ieong, Bruce Doris, et al.
ICSICT 2004
We have studied ultrathin Al2O3 and HfO2 gate dielectrics on Ge grown by ultrahigh vacuum-reactive atomic-beam deposition and ultraviolet ozone oxidation. Al2O3-Ge gate stack had a teq ∼ 23 Å, and three orders of magnitude lower leakage current compared to SiO2. HfO2-Ge allowed even greater sealing, achieving teq ∼ 11 Å and six orders of magnitude lower leakage currept compared to SiO2. We have earried out a detailed study of cleaning conditions for the Ge wafer, dielectric deposition condition, and anneal conditions and their effect on the electrical properties of metal-gated dielectric-Ge capacitors. We show that surface nitridation is important in reducing hysteresis, interfacial layer formation and leakage current. However, surface nitridation also introduces positive trapped charges and/or dipoles at the interface, resulting in significant flatband voltage shifts, which are mitigated by post-deposition anneals. © 2004 IEEE.
Meikei Ieong, Bruce Doris, et al.
ICSICT 2004
Huiling Shang, Martin M. Frank, et al.
IBM J. Res. Dev
Chengwen Pei, Roger Booth, et al.
ICSICT 2008
Xiaohin Yuan, Jae-Eun Park, et al.
IEEE T-DMR