Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
We have studied the luminescence intensity associated with type-I and type-II interband transitions in several CdSe/ZnTe quantum well structures as a function of CdSe layer thickness. It was found that as the CdSe layers become wider, the intensity of the type-I transition increases, while that of the type-II transition decreases. These results are analyzed in terms of a variational calculation which takes into account the Coulomb interaction between the electrons and holes that participate in the interband transitions. © 1998 Elsevier Science Ltd. All rights reserved.
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Robert W. Keyes
Physical Review B
Frank Stem
C R C Critical Reviews in Solid State Sciences
Imran Nasim, Melanie Weber
SCML 2024