About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
IRPS 2016
Conference paper
Triangular Voltage Sweep (TVS) characterisation for Through-Silicon-Via (TSV) reliability
Abstract
We demonstrate the use of TVS for reliability characterization of TSV. TVS complements conventional methods of dielectric reliability characterization such as VBD and TDDB. TVS is used to study copper diffusion out of the TSV and the impact of TSV process on neighboring devices.