Manuel Le Gallo, Abu Sebastian, et al.
IRPS 2016
Conference paper
Triangular Voltage Sweep (TVS) characterisation for Through-Silicon-Via (TSV) reliability
Abstract
We demonstrate the use of TVS for reliability characterization of TSV. TVS complements conventional methods of dielectric reliability characterization such as VBD and TDDB. TVS is used to study copper diffusion out of the TSV and the impact of TSV process on neighboring devices.
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