Publication
IRPS 2016
Conference paper

Triangular Voltage Sweep (TVS) characterisation for Through-Silicon-Via (TSV) reliability

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Abstract

We demonstrate the use of TVS for reliability characterization of TSV. TVS complements conventional methods of dielectric reliability characterization such as VBD and TDDB. TVS is used to study copper diffusion out of the TSV and the impact of TSV process on neighboring devices.

Date

Publication

IRPS 2016

Authors

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