Transplanted Si films on arbitrary substrates using GaN underlayers

Abstract

We demonstrate that Si layers overgrown on GaN/sapphire substrate structures can be transferred onto host substrates by using the technique of laser-induced metallization of GaN at the GaN/ sapphire interface via the reaction GaN=Ga+ 1/2N2. This may allow the grafting of films of Si onto substrates such as glass or plastic for microelectronic applications. We examine the debonding mechanism and propose that it occurs due to pressures of the order of a few thousand atmospheres generated with the release of nitrogen from the GaN metallization reaction. © 2000 American Institute of Physics.