Conference paper
Soft x-ray diffraction of striated muscle
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Germanium nanowires grown by chemical vapor deposition exhibit a peculiar dopant incorporation mechanism. The dopant atoms, such as boron and phosphorus, get incorporated through the wire surface, a mechanism which limits the doping modulation along the wire length, and therefore the fabrication of more elaborate structures that combine both n- and p-type doping. Using a novel device design that circumvents these constraints, we demonstrate here a linear Ge nanowire p-n junction. © 2006 American Chemical Society.
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Frank Stem
C R C Critical Reviews in Solid State Sciences
J. Tersoff
Applied Surface Science
P.C. Pattnaik, D.M. Newns
Physical Review B