William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Accurate measurement of inversion thickness is essential in ULSI technology for development and control of ultra-thin gate dielectric processes. However, the accuracy of the measurement can be severely affected by the high gate leakage current and series resistance. This paper presents a methodology to reduce the measurement error by optimizing the ac modulation frequency and test device structures.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Frank Stem
C R C Critical Reviews in Solid State Sciences
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
A. Reisman, M. Berkenblit, et al.
JES