International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Thickness measurement of ultra-thin gate dielectrics under inversion condition

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Accurate measurement of inversion thickness is essential in ULSI technology for development and control of ultra-thin gate dielectric processes. However, the accuracy of the measurement can be severely affected by the high gate leakage current and series resistance. This paper presents a methodology to reduce the measurement error by optimizing the ac modulation frequency and test device structures.