Sub-60 nm physical gate length SOI CMOS
- I.Y. Yang
- K. Chen
- et al.
- 1999
- IEDM 1999
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4 results for P.R. Varekamp
Breakdown measurements of ultra-thin SiO2 at low voltage
- J.H. Stathis
- A. Vayshenker
- et al.
- 2000
- VLSI Technology 2000
Thickness measurement of ultra-thin gate dielectrics under inversion condition
- W. Zhu
- Mukesh Khare
- et al.
- 2001
- International Symposium on VLSI Technology, Systems, and Applications, Proceedings
Nucleation of chemical vapor deposited silicon nitride on silicon dioxide
- M. Copel
- P.R. Varekamp
- et al.
- 1999
- Applied Physics Letters