Conference paper
Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
The rate equations for carriers injected into an amorphous semiconductor are considered for a simple model with radiative recombination of injected electron and holes and with emission and absorption of optical phonons of a single energy. The approximate energy dependence of the rate coefficients is calculated for a model of the band tail states. A steady-state solution of the rate equations is compared with experimental results for luminescence and photoconductivity in amorphous As2Te2Se. © 1972.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Michiel Sprik
Journal of Physics Condensed Matter
Imran Nasim, Melanie Weber
SCML 2024
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures