Thermal and electromigration-induced strains in copper conductor lines: X-ray microbeam measurements and analysis

Abstract

We have carried out measurements of electromigration-induced strains in copper conductor lines using microbeam energy dispersive x-ray diffraction. Strains developed in random texture damascene Cu 2μm-wide, 0.16 μm-thick conductor lines with TaN liners in low-k dielectric during electromigration at 350°C are much smaller than electromigration-induced strains in (111) fiber texture Al-on-Si, 10μm-wide, SiO2 passivated conductor lines. The reasons for these differences in electromigration behavior may involve the different roles of grain boundary and interface diffusion paths and the different passivation structures and materials for the two types of samples. © 2006 Materials Research Society.