About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Journal of Applied Physics
Paper
Thermal activation energies of Mg in GaN:Mg measured by the Hall effect and admittance spectroscopy
Abstract
A series of GaN:Mg structures were grown in molecular beam epitaxy, using either one or two rf nitrogen sources, and in metalorganic chemical vapor deposition systems with varying Mg flux. Acceptor energies were measured using the Hall effect and admittance spectroscopy techniques. The acceptor energies were found to be different for the two methods, i.e., 135–155 meV for the Hall effect measurement and 80–115 meV for the admittance spectroscopy measurement. The apparently small acceptor energies from the admittance spectroscopy measurement were explained, through a simulation process, by the combined effects of (1) high Mg acceptor concentration with no other free carrier sources, and (2) the Mg emission kinetics assisted by the Frenkel–Poole field effect in the GaN:Mg structures. © 2000, American Institute of Physics. All rights reserved.